BS ISO 13083:2015 pdf download – Surface chemical analysis — Scanning probe microscopy — Standards on the definition and calibration of spatial resolution of electrical scanning probe microscopes (ESPMs) such as SSRM and SCM for 2D-dopant imaging and other purposes 5 General information 5.1 Background information ESPM is a branch of scanning probe microscope that can be used to image an electrical or electronic property of a sample surface using an electrically conducting probe. Since this conductive probe is scanned over the sample surface in the contact mode, its lateral resolution is strongly related to the size and shape of the probe apex. Currently, this can be as small as a few nanometres, enabling sub-10 nanometre spatial resolution to be achieved. Such a high resolution, shown in ESPM images, allows the investigation of the two-dimensional distribution of carriers in nanoscale semiconductor devices. 5.2 Target There are a number of types of ESPM categorized by the methods of electrical characterization. Among these ESPMs, this International Standard is for SCM and SSRM. 5.2.1 Scanning capacitance microscope Scanning capacitance microscopy (SCM) is a modification of scanning probe microscopy in which a conductive probe is in contact with the surface of a sample, with an applied AC bias, and scanned across it. SCM characterizes the change in electrostatic capacitance between the sample and the probe on the surface of the sample. SCM uses an ultra-sharp conducting probe made from etched silicon (often coated with Pt/Ir or Co/Cr alloy) to form a metal-insulator-semiconductor (MIS/MOS) capacitor with a semiconductor sample if a native oxide exists on the sample. When the conducting probe is in contact to the surface under an AC bias, generated capacitance variations on the surface can be detected using a GHz resonant capacitance sensor. The probe is then scanned across the semiconductor’s surface in x- and y-axes while the probe is operated under the contact mode. By applying an alternating bias to the metal-coated probe or the sample, carriers are alternately accumulated and depleted within the semiconductor’s surface layers under the probe, changing the tip-sample capacitance. The magnitude of this change in capacitance with the applied voltage gives information about the concentration of carriers (SCM amplitude data), whereas the difference in phase between the capacitance change and the applied, alternating bias carries information about the sign of the charge carriers (SCM phase data). [2] 5.2.2 Scanning spreading resistance microscope A very challenging task...
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